Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPSA70R1K4P7SAKMA1
BESCHREIBUNG
MOSFET N-CH 700V 4A TO251-3
DETAILIERTE BESCHREIBUNG
N-Channel 700 V 4A (Tc) 22.7W (Tc) Through Hole PG-TO251-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™ P7
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
4.7 nC @ 400 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
158 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
22.7W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IPSA70

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SP001664778
IFEINFIPSA70R1K4P7SAKMA1
IPSA70R1K4P7S
2156-IPSA70R1K4P7SAKMA1

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPSA70R1K4P7SAKMA1

Dokumente und Medien

Datasheets
1(IPSA70R1K4P7S)
HTML Datasheet
1(IPSA70R1K4P7S)
Simulation Models
1(MOSFET CoolMOS™ P7 700V Spice Model)

Menge Preis

QUANTITÄT: 1500
Einzelpreis: $0.25436
Verpackung: Tube
MinMultiplikator: 1500

Stellvertreter

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