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TEILNUMMER DES HERSTELLERS
PBHV8515QA147
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 150 V 500 mA 75MHz 325 mW Surface Mount DFN1010D-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,540
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
150 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 100mA, 500mA
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 200mA, 10V
Power - Max
325 mW
Frequency - Transition
75MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Supplier Device Package
DFN1010D-3
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-PBHV8515QA147
NEXNXPPBHV8515QA147
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. PBHV8515QA147
Dokumente und Medien
Datasheets
1(PBHV8515QA)
HTML Datasheet
1(PBHV8515QA)
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