Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FQB8P10TM
BESCHREIBUNG
MOSFET P-CH 100V 8A D2PAK
DETAILIERTE BESCHREIBUNG
P-Channel 100 V 8A (Tc) 3.75W (Ta), 65W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
800

Technische Daten

Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.75W (Ta), 65W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
FQB8P10

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

FQB8P10TMTR
FQB8P10TMDKR
FQB8P10TM-ND
2156-FQB8P10TM-OS
FQB8P10TMCT

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQB8P10TM

Dokumente und Medien

Datasheets
1(FQB8P10TM Datasheet)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
()
PCN Assembly/Origin
1(Multiple Parts 23/Jun/2022)
PCN Packaging
()

Menge Preis

QUANTITÄT: 1
Einzelpreis: $1.4
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $1.4
Verpackung: Digi-Reel®
MinMultiplikator: 1

Stellvertreter

Teil Nr. : IPB19DP10NMATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 2,000
Einzelpreis. : $2.16000
Ersatztyp. : MFR Recommended
Teil Nr. : IRF5210STRLPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 3,507
Einzelpreis. : $2.93000
Ersatztyp. : Similar