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ChinaIRF6620TR1PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6620TR1PBF
BESCHREIBUNG
MOSFET N-CH 20V 27A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 27A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
27A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 27A, 10V
Vgs(th) (Max) @ Id
2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4130 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MX
Package / Case
DirectFET™ Isometric MX
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF6620TR1PBFDKR
IRF6620TR1PBFTR
SP001525516
IRF6620TR1PBFCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6620TR1PBF
Dokumente und Medien
Datasheets
1(IRF6620(TR)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
()
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Multiple Devices 20/Dec/2013)
HTML Datasheet
1(IRF6620(TR)PbF)
Product Drawings
1(IR Hexfet Circuit)
Menge Preis
-
Stellvertreter
Teil Nr. : IRF6620TRPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 9
Einzelpreis. : $1.58000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 9
Einzelpreis. : $1.58000
Ersatztyp. : Parametric Equivalent