English
Spain
Rusia
Italy
ChinaBD436G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BD436G
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR, PNP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 32 V 4 A 3MHz 36 W Through Hole TO-225-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
888
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
32 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 2A, 1V
Power - Max
36 W
Frequency - Transition
3MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-225-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSBD436G
2156-BD436G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi BD436G
Dokumente und Medien
Datasheets
1(BD436TG)
Menge Preis
QUANTITÄT: 888
Einzelpreis: $0.34
Verpackung: Bulk
MinMultiplikator: 888
Verpackung: Bulk
MinMultiplikator: 888
Stellvertreter
-