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ChinaRF1S70N03
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RF1S70N03
BESCHREIBUNG
MOSFET N-CH 30V 70A TO262AA
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 70A (Tc) 150W (Tc) Through Hole TO-262AA
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
188
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Rds On (Max) @ Id, Vgs
10mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
260 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262AA
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-RF1S70N03
HARHARRF1S70N03
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RF1S70N03
Dokumente und Medien
Datasheets
1(RF1S70N03)
Menge Preis
QUANTITÄT: 188
Einzelpreis: $1.6
Verpackung: Bulk
MinMultiplikator: 188
Verpackung: Bulk
MinMultiplikator: 188
Stellvertreter
-