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ChinaKSB1017YTU
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TEILNUMMER DES HERSTELLERS
KSB1017YTU
BESCHREIBUNG
TRANS PNP 80V 4A TO220F-3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 80 V 4 A 9MHz 25 W Through Hole TO-220F-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
KSB1017YTU Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
1.7V @ 300mA, 3A
Current - Collector Cutoff (Max)
30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA, 5V
Power - Max
25 W
Frequency - Transition
9MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F-3
Base Product Number
KSB1017
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi KSB1017YTU
Dokumente und Medien
Datasheets
1(KSB1017)
Environmental Information
()
PCN Obsolescence/ EOL
1(Obsolete Notice 15/Dec/2022)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Assembly/Test Site 14/Dec/2022)
PCN Packaging
()
EDA Models
1(KSB1017YTU Models)
Menge Preis
-
Stellvertreter
-