English
Spain
Rusia
Italy
ChinaIRF5806TRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF5806TRPBF
BESCHREIBUNG
MOSFET P-CH 20V 4A MICRO6
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
86mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.4 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
594 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Micro6™(TSOP-6)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF5806TRPBFDKR
IRF5806TRPBFCT
SP001576892
IRF5806TRPBF-ND
IRF5806TRPBFTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF5806TRPBF
Dokumente und Medien
Datasheets
1(IRF5806PBF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
()
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IRF5806PBF)
Menge Preis
-
Stellvertreter
Teil Nr. : FDC634P
Hersteller. : onsemi
Verfügbare Menge. : 2,000
Einzelpreis. : $0.59000
Ersatztyp. : Similar
Verfügbare Menge. : 2,000
Einzelpreis. : $0.59000
Ersatztyp. : Similar