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China2N6660
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2N6660
BESCHREIBUNG
MOSFET N-CH 60V 1.1A TO39
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 1.1A (Tc) 6.25W (Tc) Through Hole TO-39
HERSTELLER
Solid State Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
Solid State Inc.
Series
-
Package
Box
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Vgs (Max)
±40V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
6.25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-39
Package / Case
TO-205AD, TO-39-3 Metal Can
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Solid State Inc. 2N6660
Dokumente und Medien
Datasheets
1(2N6660)
HTML Datasheet
1(2N6660)
Menge Preis
QUANTITÄT: 5
Einzelpreis: $4.95
Verpackung: Box
MinMultiplikator: 5
Verpackung: Box
MinMultiplikator: 5
Stellvertreter
-