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ChinaBSC0403NSATMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSC0403NSATMA1
BESCHREIBUNG
150V, N-CH MOSFET, LOGIC LEVEL,
DETAILIERTE BESCHREIBUNG
N-Channel 150 V 70A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-7
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
BSC0403NSATMA1 Models
STANDARDPAKET
5,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™ 5
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Rds On (Max) @ Id, Vgs
11mOhm @ 35A, 10
Vgs(th) (Max) @ Id
4.6V @ 91µA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-7
Package / Case
8-PowerTDFN
Base Product Number
BSC0403
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
448-BSC0403NSATMA1DKR
448-BSC0403NSATMA1TR
SP005399481
448-BSC0403NSATMA1CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC0403NSATMA1
Dokumente und Medien
Datasheets
1(BSC0403NS)
PCN Design/Specification
1(Mult Dev Mould Chgs 22/Jun/2022)
PCN Assembly/Origin
1(Optimos Site/Mat Chgs 30/May/2022)
EDA Models
1(BSC0403NSATMA1 Models)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $1.8486
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $2.323
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $2.8
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
Stellvertreter
-