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ChinaIRF7807PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF7807PBF
BESCHREIBUNG
MOSFET N-CH 30V 8.3A 8SO
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 8.3A (Ta) 2.5W (Tc) Surface Mount 8-SO
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
95
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Rds On (Max) @ Id, Vgs
25mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 5 V
Vgs (Max)
±12V
FET Feature
-
Power Dissipation (Max)
2.5W (Tc)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7807PBF
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