Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRFSL3107PBF
BESCHREIBUNG
MOSFET N-CH 75V 195A TO262
DETAILIERTE BESCHREIBUNG
N-Channel 75 V 195A (Tc) 370W (Tc) Through Hole TO-262
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000

Technische Daten

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3mOhm @ 140A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9370 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
370W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRFSL3107

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-IRFSL3107PBF
INFINFIRFSL3107PBF
SP001557588

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFSL3107PBF

Dokumente und Medien

Datasheets
1(IRFS(L)3107PBF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
HTML Datasheet
1(IRFS(L)3107PBF)
Simulation Models
1(IRFSL3107 Spice Model)

Menge Preis

-

Stellvertreter

Teil Nr. : IRFSL3207ZPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 880
Einzelpreis. : $3.39000
Ersatztyp. : MFR Recommended