Series
SkyFET®, TrenchFET®
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
14.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1025 pF @ 15 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
5W (Tc)
Operating Temperature
-55°C ~ 150°C (TA)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4774