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ChinaIPC218N06N3X1SA2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPC218N06N3X1SA2
BESCHREIBUNG
MOSFET N-CH 60V 3A SAWN ON FOIL
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 3A (Tj) Surface Mount Sawn on foil
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
28 Weeks
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
3A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 196µA
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
Sawn on foil
Package / Case
Die
Base Product Number
IPC218N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPC218N06N3X1SA2-ND
448-IPC218N06N3X1SA2
SP000544188
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPC218N06N3X1SA2
Dokumente und Medien
Datasheets
1(IPC218N06N3)
HTML Datasheet
1(IPC218N06N3)
Menge Preis
QUANTITÄT: 6195
Einzelpreis: $2.5685
Verpackung: Bulk
MinMultiplikator: 6195
Verpackung: Bulk
MinMultiplikator: 6195
Stellvertreter
-