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ChinaAPT5F100K
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APT5F100K
BESCHREIBUNG
MOSFET N-CH 1000V 5A TO220
DETAILIERTE BESCHREIBUNG
N-Channel 1000 V 5A (Tc) 225W (Tc) Through Hole TO-220 [K]
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
POWER MOS 8™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.8Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1409 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
225W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 [K]
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
APT5F100K-ND
150-APT5F100K
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT5F100K
Dokumente und Medien
Datasheets
()
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 30/Apr/2015)
HTML Datasheet
1(Power Products Catalog)
Menge Preis
-
Stellvertreter
-