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ChinaPTFA081501E V1
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TEILNUMMER DES HERSTELLERS
PTFA081501E V1
BESCHREIBUNG
RF MOSFET LDMOS 28V H-30248-2
DETAILIERTE BESCHREIBUNG
RF Mosfet 28 V 950 mA 900MHz 18dB 150W H-30248-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
GOLDMOS®
Package
Tray
Product Status
Obsolete
Technology
LDMOS
Frequency
900MHz
Gain
18dB
Voltage - Test
28 V
Current Rating (Amps)
10µA
Noise Figure
-
Current - Test
950 mA
Power - Output
150W
Voltage - Rated
65 V
Mounting Type
Surface Mount
Package / Case
2-Flatpack, Fin Leads, Flanged
Supplier Device Package
H-30248-2
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
PTFA081501E V1-ND
PTFA081501EV1
SP000082730
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/RF FETs, MOSFETs/Infineon Technologies PTFA081501E V1
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