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ChinaSI4776DY-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI4776DY-T1-GE3
BESCHREIBUNG
MOSFET N-CHANNEL 30V 11.9A 8SO
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 11.9A (Tc) 4.1W (Tc) Surface Mount 8-SOIC
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
SkyFET®, TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
17.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
521 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
4.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TA)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4776
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI4776DY-T1-GE3TR
SI4776DY-T1-GE3CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI4776DY-T1-GE3
Dokumente und Medien
Datasheets
1(Si4776DY)
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
HTML Datasheet
1(Si4776DY)
Menge Preis
-
Stellvertreter
Teil Nr. : DMS3015SSS-13
Hersteller. : Diodes Incorporated
Verfügbare Menge. : 44,403
Einzelpreis. : $0.44000
Ersatztyp. : Similar
Verfügbare Menge. : 44,403
Einzelpreis. : $0.44000
Ersatztyp. : Similar