English
Spain
Rusia
Italy
ChinaSI5443DC-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI5443DC-T1-GE3
BESCHREIBUNG
MOSFET P-CH 20V 3.6A 1206-8
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 3.6A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
65mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 4.5 V
Vgs (Max)
±12V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
1206-8 ChipFET™
Package / Case
8-SMD, Flat Lead
Base Product Number
SI5443
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI5443DC-T1-GE3
Dokumente und Medien
Environmental Information
()
HTML Datasheet
1(SI5443DC)
Menge Preis
-
Stellvertreter
-