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ChinaIXTT2N300P3HV
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXTT2N300P3HV
BESCHREIBUNG
MOSFET N-CH 3000V 2A TO268
DETAILIERTE BESCHREIBUNG
N-Channel 3000 V 2A (Tc) 520W (Tc) Surface Mount TO-268HV (IXTT)
HERSTELLER
IXYS
STANDARD LEADTIME
43 Weeks
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
IXYS
Series
Polar P3™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
3000 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
21Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1890 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-55°C ~ 155°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268HV (IXTT)
Package / Case
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Base Product Number
IXTT2
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTT2N300P3HV
Dokumente und Medien
Datasheets
1(IXT(T,H)2N300P3HV)
Environmental Information
1(Ixys IC REACH)
PCN Design/Specification
1(Mult Dev MSL3 Pkg Chg 9/Jun/2020)
PCN Packaging
1(Multiple Devices MSL 09/Jun/2020)
HTML Datasheet
1(IXT(T,H)2N300P3HV)
Menge Preis
QUANTITÄT: 120
Einzelpreis: $38.94833
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $41.73033
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $49.8
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-