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ChinaFGA40T65UQDF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FGA40T65UQDF
BESCHREIBUNG
INSULATED GATE BIPOLAR TRANSISTO
DETAILIERTE BESCHREIBUNG
IGBT NPT 650 V 80 A 231 W Through Hole TO-3PN
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
146
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
80 A
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
1.67V @ 15V, 40A
Power - Max
231 W
Switching Energy
989µJ (on), 310µJ (off)
Input Type
Standard
Gate Charge
306 nC
Td (on/off) @ 25°C
32ns/271ns
Test Condition
400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr)
89 ns
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3PN
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
ONSFSCFGA40T65UQDF
2156-FGA40T65UQDF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Fairchild Semiconductor FGA40T65UQDF
Dokumente und Medien
Datasheets
1(FGA40T65UQDF Datasheet)
Menge Preis
QUANTITÄT: 146
Einzelpreis: $2.06
Verpackung: Bulk
MinMultiplikator: 146
Verpackung: Bulk
MinMultiplikator: 146
Stellvertreter
-