English
Spain
Rusia
Italy
ChinaRJK6018DPM-00#T1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RJK6018DPM-00#T1
BESCHREIBUNG
MOSFET N-CH 600V 30A TO3PFM
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 30A (Ta) 60W (Tc) Through Hole TO-3PFM
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
RJK6018DPM-00#T1 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
235mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PFM
Package / Case
TO-220-3 Full Pack
Base Product Number
RJK6018
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK6018DPM-00#T1
Dokumente und Medien
Datasheets
1(RJK6018DPM)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
EDA Models
1(RJK6018DPM-00#T1 Models)
Menge Preis
-
Stellvertreter
-