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ChinaIXFN64N50PD3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXFN64N50PD3
BESCHREIBUNG
MOSFET N-CH 500V 50A SOT227B
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 50A (Tc) 625W (Tc) Chassis Mount SOT-227B
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
PolarHV™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
186 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
11000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
625W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXFN64
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFN64N50PD3
Dokumente und Medien
Datasheets
1(IXFN64N50PD(2)3)
PCN Obsolescence/ EOL
1(IXFN64N50PD3 11/Dec/2017)
HTML Datasheet
1(IXFN64N50PD(2)3)
Menge Preis
-
Stellvertreter
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