Product Status
Not For New Designs
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
196mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
32.6 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
527 pF @ 800 V
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Base Product Number
C2M0160120