Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IXTR102N65X2
BESCHREIBUNG
MOSFET N-CH 650V 54A ISOPLUS247
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 54A (Tc) 330W (Tc) Through Hole ISOPLUS247™
HERSTELLER
IXYS
STANDARD LEADTIME
47 Weeks
EDACAD-MODELL
IXTR102N65X2 Models
STANDARDPAKET
30

Technische Daten

Mfr
IXYS
Series
Ultra X2
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
33mOhm @ 51A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
152 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
10900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
330W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ISOPLUS247™
Package / Case
TO-247-3
Base Product Number
IXTR102

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTR102N65X2

Dokumente und Medien

Datasheets
()
Environmental Information
1(Ixys IC REACH)
Featured Product
1(Power MOSFETs 600 V to 700 V with HiPerFET™ Option - X2-Class Series)
EDA Models
1(IXTR102N65X2 Models)

Menge Preis

QUANTITÄT: 510
Einzelpreis: $13.08908
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $15.33875
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $16.36133
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $19.74
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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