English
Spain
Rusia
Italy
ChinaPMXB65ENE,147
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PMXB65ENE,147
BESCHREIBUNG
NOW NEXPERIA PMXB65ENE - SMALL S
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,401
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
67mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
295 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
400mW (Ta), 8.33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN1010D-3
Package / Case
3-XDFN Exposed Pad
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-PMXB65ENE147-NX
NEXNXPPMXB65ENE,147
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMXB65ENE,147
Dokumente und Medien
Datasheets
1(PMXB65ENE)
HTML Datasheet
1(PMXB65ENE)
Menge Preis
QUANTITÄT: 1401
Einzelpreis: $0.21
Verpackung: Bulk
MinMultiplikator: 1401
Verpackung: Bulk
MinMultiplikator: 1401
Stellvertreter
-