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ChinaPDTC115EMB,315
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PDTC115EMB,315
BESCHREIBUNG
TRANS PREBIAS NPN 50V 0.02A 3DFN
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 20 mA 230 MHz 250 mW Surface Mount DFN1006B-3
HERSTELLER
NXP Semiconductors
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
11,181
Lagerbestände
Technische Daten
Mfr
NXP Semiconductors
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
20 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
100 kOhms
Resistor - Emitter Base (R2)
100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
230 MHz
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
DFN1006B-3
Base Product Number
PDTC115
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
NEXNEXPDTC115EMB,315
2156-PDTC115EMB,315-NEX
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP Semiconductors PDTC115EMB,315
Dokumente und Medien
Datasheets
1(PDTC115EMB)
Menge Preis
QUANTITÄT: 11181
Einzelpreis: $0.03
Verpackung: Bulk
MinMultiplikator: 11181
Verpackung: Bulk
MinMultiplikator: 11181
Stellvertreter
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