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ChinaPDTA114ET,235
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PDTA114ET,235
BESCHREIBUNG
TRANS PREBIAS PNP 50V SOT23
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 mW Surface Mount SOT-23
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23
Base Product Number
PDTA114
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-PDTA114ET,235
NEXNXPPDTA114ET,235
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP USA Inc. PDTA114ET,235
Dokumente und Medien
Datasheets
1(PDTA114ET,215 Datasheet)
Menge Preis
QUANTITÄT: 15000
Einzelpreis: $0.02
Verpackung: Bulk
MinMultiplikator: 15000
Verpackung: Bulk
MinMultiplikator: 15000
Stellvertreter
-