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ChinaPMV22EN,215
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PMV22EN,215
BESCHREIBUNG
MOSFET N-CH 30V 5.2A TO236AB
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 5.2A (Ta) 510mW (Ta) Surface Mount SOT-23 (TO-236AB)
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
22mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
480 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
510mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23 (TO-236AB)
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
PMV2
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
568-7535-2
568-7535-1
2156-PMV22EN215
568-7535-6
934065651215
954-PMV22EN215
NEXNXPPMV22EN,215
PMV22EN215
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMV22EN,215
Dokumente und Medien
Datasheets
1(PMV22EN)
Environmental Information
()
PCN Obsolescence/ EOL
1(MCU Dip Supply Situation 12/May/2015)
PCN Design/Specification
1(Resin Hardener 02/Jul/2013)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PMV22EN)
Menge Preis
-
Stellvertreter
-