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ChinaSI5415EDU-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI5415EDU-T1-GE3
BESCHREIBUNG
MOSFET P-CH 20V 25A PPAK
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
9.8mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
4300 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 31W (Tc)
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® ChipFet Single
Package / Case
PowerPAK® ChipFET™ Single
Base Product Number
SI5415
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI5415EDU-T1-GE3CT
SI5415EDU-T1-GE3TR
SI5415EDU-T1-GE3DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI5415EDU-T1-GE3
Dokumente und Medien
Datasheets
1(SI5415EDU)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
PCN Assembly/Origin
1(Mult Devs Assembly Location 31/Jan/2023)
HTML Datasheet
1(SI5415EDU)
Menge Preis
-
Stellvertreter
Teil Nr. : SI5419DU-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 16,907
Einzelpreis. : $0.60000
Ersatztyp. : Similar
Verfügbare Menge. : 16,907
Einzelpreis. : $0.60000
Ersatztyp. : Similar