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ChinaIPD50R280CEATMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPD50R280CEATMA1
BESCHREIBUNG
MOSFET N-CH 500V 13A TO252-3
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 13A (Tc) 119W (Tc) Surface Mount PG-TO252-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™ CE
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
280mOhm @ 4.2A, 13V
Vgs(th) (Max) @ Id
3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs
32.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
773 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
119W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD50R
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPD50R280CEATMA1CT
IPD50R280CEATMA1DKR
INFINFIPD50R280CEATMA1
SP001117680
2156-IPD50R280CEATMA1
IPD50R280CEATMA1TR
IPD50R280CEATMA1-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD50R280CEATMA1
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Menge Preis
-
Stellvertreter
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