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ChinaSIRA22DP-T1-RE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIRA22DP-T1-RE3
BESCHREIBUNG
MOSFET N-CH 25V 60A PPAK SO-8
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 60A (Tc) 83.3W (Tc) Surface Mount PowerPAK® SO-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
14 Weeks
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.76mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 10 V
Vgs (Max)
+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds
7570 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
83.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIRA22
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIRA22DP-T1-RE3DKR
SIRA22DP-T1-RE3TR
SIRA22DP-T1-RE3CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIRA22DP-T1-RE3
Dokumente und Medien
Datasheets
1(SIRA22DP)
PCN Design/Specification
()
HTML Datasheet
1(SIRA22DP)
Menge Preis
QUANTITÄT: 9000
Einzelpreis: $0.53603
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
QUANTITÄT: 6000
Einzelpreis: $0.56196
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Stellvertreter
-