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TEILNUMMER DES HERSTELLERS
BC808-40
BESCHREIBUNG
BJT SOT23 25V PNP 0.31W 150C
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 25 V 800 mA 100MHz 310 mW Surface Mount SOT-23-3 (TO-236)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
15,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
800 mA
Voltage - Collector Emitter Breakdown (Max)
25 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA, 1V
Power - Max
310 mW
Frequency - Transition
100MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
INFINFBC808-40
2156-BC808-40
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Infineon Technologies BC808-40
Dokumente und Medien
Datasheets
1(BC80725E6327HTSA1 Datasheet)
Menge Preis
QUANTITÄT: 15000
Einzelpreis: $0.02
Verpackung: Bulk
MinMultiplikator: 15000
Verpackung: Bulk
MinMultiplikator: 15000
Stellvertreter
-