Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SI4354DY-T1-E3
BESCHREIBUNG
MOSFET N-CH 30V 9.5A 8SO
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 9.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16.5mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 4.5 V
Vgs (Max)
±12V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4354

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI4354DY-T1-E3

Dokumente und Medien

Datasheets
1(SI4354DY)
HTML Datasheet
1(SI4354DY)

Menge Preis

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Stellvertreter

Teil Nr. : DMN3016LSS-13
Hersteller. : Diodes Incorporated
Verfügbare Menge. : 12,048
Einzelpreis. : $0.53000
Ersatztyp. : Similar