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ChinaIXGQ20N120B
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXGQ20N120B
BESCHREIBUNG
IGBT 1200V 40A 190W TO3P
DETAILIERTE BESCHREIBUNG
IGBT PT 1200 V 40 A 190 W Through Hole TO-3P
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
-
Package
Tube
Product Status
Active
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
40 A
Current - Collector Pulsed (Icm)
100 A
Vce(on) (Max) @ Vge, Ic
3.4V @ 15V, 20A
Power - Max
190 W
Switching Energy
2.1mJ (off)
Input Type
Standard
Gate Charge
62 nC
Td (on/off) @ 25°C
20ns/270ns
Test Condition
960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)
40 ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Base Product Number
IXGQ20
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/IXYS IXGQ20N120B
Dokumente und Medien
Datasheets
1(IXGQ20N120B(D1))
Environmental Information
1(Ixys IC REACH)
PCN Design/Specification
1(Multiple Devices Material 23/Jun/2020)
HTML Datasheet
1(IXGQ20N120B(D1))
Menge Preis
-
Stellvertreter
-