Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
C3M0120090J
BESCHREIBUNG
SICFET N-CH 900V 22A D2PAK-7
DETAILIERTE BESCHREIBUNG
N-Channel 900 V 22A (Tc) 83W (Tc) Surface Mount TO-263-7
HERSTELLER
Wolfspeed, Inc.
STANDARD LEADTIME
34 Weeks
EDACAD-MODELL
C3M0120090J Models
STANDARDPAKET
50

Technische Daten

Mfr
Wolfspeed, Inc.
Series
C3M™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id
3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
17.3 nC @ 15 V
Vgs (Max)
+18V, -8V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 600 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
C3M0120090

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Andere Namen

C3M0120090J-ND
1697-C3M0120090J
-3312-C3M0120090J

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Wolfspeed, Inc. C3M0120090J

Dokumente und Medien

Featured Product
()
PCN Design/Specification
()
Article Library
1(Use SiC-Based MOSFETs to Improve Power Conversion Efficiency)
HTML Datasheet
1(C3M0120090J)
EDA Models
1(C3M0120090J Models)

Menge Preis

QUANTITÄT: 1000
Einzelpreis: $7.99264
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 500
Einzelpreis: $8.71378
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $9.6152
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 50
Einzelpreis: $10.2162
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $12.62
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

-