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TEILNUMMER DES HERSTELLERS
2SB1032K-E
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR, PNP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP - Darlington 120 V 10 A 80 W Through Hole TO-3P
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
91
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Darlington
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
3V @ 100mA, 10A
Current - Collector Cutoff (Max)
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A, 3V
Power - Max
80 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-2SB1032K-E
RENRNS2SB1032K-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SB1032K-E
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 91
Einzelpreis: $3.33
Verpackung: Bulk
MinMultiplikator: 91
Verpackung: Bulk
MinMultiplikator: 91
Stellvertreter
-