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ChinaNTMS7N03R2G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTMS7N03R2G
BESCHREIBUNG
MOSFET N-CH 30V 4.8A 8SOIC
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 4.8A (Ta) 800mW (Ta) Surface Mount 8-SOIC
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTMS7N03R2G Models
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1190 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
800mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
NTMS7
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
NTMS7N03R2GOSCT
ONSONSNTMS7N03R2G
NTMS7N03R2GOSTR
NTMS7N03R2GOSDKR
NTMS7N03R2GOS
2156-NTMS7N03R2G-OS
NTMS7N03R2GOS-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTMS7N03R2G
Dokumente und Medien
Datasheets
1(NTMS7N03R2)
Environmental Information
()
PCN Design/Specification
1(Multiple Devices Copper Wire 20/Aug/2008)
PCN Packaging
1(Mult MSL1 Pkg Chg 20/Dec/2018)
HTML Datasheet
1(NTMS7N03R2)
EDA Models
1(NTMS7N03R2G Models)
Menge Preis
-
Stellvertreter
Teil Nr. : TSM180N03CS RLG
Hersteller. : Taiwan Semiconductor Corporation
Verfügbare Menge. : 4,980
Einzelpreis. : $0.44000
Ersatztyp. : Similar
Verfügbare Menge. : 4,980
Einzelpreis. : $0.44000
Ersatztyp. : Similar