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ChinaIRFBC30LPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFBC30LPBF
BESCHREIBUNG
MOSFET N-CH 600V 3.6A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 3.6A (Tc) 3.1W (Ta), 74W (Tc) Through Hole TO-262-3
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRFBC30
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFBC30LPBF
Dokumente und Medien
HTML Datasheet
1(IRFBC30S,L, SiHFBC30S,L)
Product Drawings
()
Menge Preis
-
Stellvertreter
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Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
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