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ChinaTIP125 SL TIN/LEAD
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TEILNUMMER DES HERSTELLERS
TIP125 SL TIN/LEAD
BESCHREIBUNG
TRANS NPN DARL 60V 5A TO220-3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN - Darlington 60 V 5 A 4MHz 65 W Through Hole TO-220-3
HERSTELLER
Central Semiconductor Corp
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Central Semiconductor Corp
Series
TIP125
Package
Tube
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
5 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
4V @ 20mA, 5A
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 3A, 3V
Power - Max
65 W
Frequency - Transition
4MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Base Product Number
TIP125
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-1583-TIP125SLTIN/LEAD
1514-TIP125SLTIN/LEAD
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Central Semiconductor Corp TIP125 SL TIN/LEAD
Dokumente und Medien
Datasheets
1(TIP12x)
Environmental Information
1(RoHS Cert)
HTML Datasheet
1(TIP12x)
Menge Preis
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Stellvertreter
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