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ChinaIXFN100N65X2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXFN100N65X2
BESCHREIBUNG
MOSFET N-CH 650V 78A SOT227B
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 78A (Tc) 595W (Tc) Chassis Mount SOT-227B
HERSTELLER
IXYS
STANDARD LEADTIME
47 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
HiPerFET™, Ultra X2
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
78A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
30mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
183 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
10800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
595W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXFN100
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFN100N65X2
Dokumente und Medien
Datasheets
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Environmental Information
1(Ixys IC REACH)
Featured Product
1(Power MOSFETs 600 V to 700 V with HiPerFET™ Option - X2-Class Series)
HTML Datasheet
1(IXFN100N65X2)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $26.2563
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MinMultiplikator: 1
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Einzelpreis: $30.02
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QUANTITÄT: 1
Einzelpreis: $33.78
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MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
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