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ChinaSIB437EDKT-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIB437EDKT-T1-GE3
BESCHREIBUNG
MOSFET P-CH 8V 9A PPAK TSC75-6
DETAILIERTE BESCHREIBUNG
P-Channel 8 V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® TSC75-6
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
34mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 4.5 V
Vgs (Max)
±5V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta), 13W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® TSC75-6
Package / Case
PowerPAK® TSC-75-6
Base Product Number
SIB437
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIB437EDKT-T1-GE3-ND
SIB437EDKT-T1-GE3TR
SIB437EDKT-T1-GE3CT
SIB437EDKT-T1-GE3DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIB437EDKT-T1-GE3
Dokumente und Medien
Datasheets
1(SIB437EDKT-T1-GE3)
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
HTML Datasheet
1(SIB437EDKT-T1-GE3)
Menge Preis
-
Stellvertreter
-