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TEILNUMMER DES HERSTELLERS
2SA1190DTZ-E
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 90 V 100 mA 130MHz 400 mW Through Hole TO-92
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,475
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
90 V
Vce Saturation (Max) @ Ib, Ic
150mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 2mA, 12V
Power - Max
400 mW
Frequency - Transition
130MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-2SA1190DTZ-E
RENRNS2SA1190DTZ-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SA1190DTZ-E
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1475
Einzelpreis: $0.2
Verpackung: Bulk
MinMultiplikator: 1475
Verpackung: Bulk
MinMultiplikator: 1475
Stellvertreter
-