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ChinaIRFSL4115PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFSL4115PBF
BESCHREIBUNG
MOSFET N-CH 150V 195A TO262
DETAILIERTE BESCHREIBUNG
N-Channel 150 V 195A (Tc) 375W (Tc) Through Hole TO-262
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12.1mOhm @ 62A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5270 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFSL4115PBF
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Datasheets
1(IRFS(L)4115PBF)
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Menge Preis
-
Stellvertreter
Teil Nr. : IPI075N15N3GXKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 498
Einzelpreis. : $6.68000
Ersatztyp. : Similar
Verfügbare Menge. : 498
Einzelpreis. : $6.68000
Ersatztyp. : Similar