Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SI8497DB-T2-E1
BESCHREIBUNG
MOSFET P-CH 30V 13A 6MICROFOOT
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 13A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-microfoot
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
27 Weeks
EDACAD-MODELL
STANDARDPAKET
3,000

Technische Daten

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2V, 4.5V
Rds On (Max) @ Id, Vgs
53mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1320 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.77W (Ta), 13W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-microfoot
Package / Case
6-UFBGA
Base Product Number
SI8497

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SI8497DB-T2-E1DKR
SI8497DB-T2-E1TR
SI8497DBT2E1
SI8497DB-T2-E1CT

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI8497DB-T2-E1

Dokumente und Medien

Datasheets
1(Si8497DB)
Environmental Information
()
HTML Datasheet
1(Si8497DB)

Menge Preis

QUANTITÄT: 30000
Einzelpreis: $0.16419
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000
QUANTITÄT: 9000
Einzelpreis: $0.16806
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000
QUANTITÄT: 6000
Einzelpreis: $0.18099
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000
QUANTITÄT: 3000
Einzelpreis: $0.19069
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000

Stellvertreter

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