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China2SA1404E
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TEILNUMMER DES HERSTELLERS
2SA1404E
BESCHREIBUNG
PNP EPITAXIAL PLANAR SILICON
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 120 V 200 mA 500MHz 1.2 W Through Hole TO-126
HERSTELLER
Sanyo
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
398
Lagerbestände
Technische Daten
Mfr
Sanyo
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 10V
Power - Max
1.2 W
Frequency - Transition
500MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
ONSSNY2SA1404E
2156-2SA1404E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Sanyo 2SA1404E
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 398
Einzelpreis: $0.75
Verpackung: Bulk
MinMultiplikator: 398
Verpackung: Bulk
MinMultiplikator: 398
Stellvertreter
-