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ChinaIRF1010ZPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF1010ZPBF
BESCHREIBUNG
IRF1010 - 12V-300V N-CHANNEL POW
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 75A (Tc) 140W (Tc) Through Hole TO-220AB
HERSTELLER
International Rectifier
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
350
Lagerbestände
Technische Daten
Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2840 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
140W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
IFEIRFIRF1010ZPBF
2156-IRF1010ZPBF-IR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier IRF1010ZPBF
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 350
Einzelpreis: $0.94
Verpackung: Bulk
MinMultiplikator: 350
Verpackung: Bulk
MinMultiplikator: 350
Stellvertreter
-