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ChinaIRF6636TR1
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TEILNUMMER DES HERSTELLERS
IRF6636TR1
BESCHREIBUNG
MOSFET N-CH 20V 18A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 18A (Ta), 81A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2420 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ ST
Package / Case
DirectFET™ Isometric ST
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF6636TR1CT
IRF6636TR1TR
SP001532396
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6636TR1
Dokumente und Medien
Datasheets
1(IRF6636)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
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HTML Datasheet
1(IRF6636)
Product Drawings
1(IR Hexfet Circuit)
Menge Preis
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Stellvertreter
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