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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
JAN2N6250T1
BESCHREIBUNG
TRANS NPN 275V 10A TO254AA
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 275 V 10 A 6 W Through Hole TO-254AA
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
275 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.25A, 10A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 10A, 3V
Power - Max
6 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/510
Mounting Type
Through Hole
Package / Case
TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package
TO-254AA
Base Product Number
2N6250
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
1086-16186
1086-16186-MIL
150-JAN2N6250T1
1086-16186-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microsemi Corporation JAN2N6250T1
Dokumente und Medien
Datasheets
1(2N6249,50,51(T1))
Environmental Information
()
HTML Datasheet
1(2N6249,50,51(T1))
Menge Preis
-
Stellvertreter
-