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ChinaSSS4N60BT
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SSS4N60BT
BESCHREIBUNG
TRANS MOSFET N-CH 600V 4A 3PIN(3
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 4A (Tj) 33W (Tc) Through Hole TO-220F-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
888
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCSSS4N60BT
2156-SSS4N60BT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor SSS4N60BT
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 888
Einzelpreis: $0.34
Verpackung: Bulk
MinMultiplikator: 888
Verpackung: Bulk
MinMultiplikator: 888
Stellvertreter
-