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ChinaCY7C1354DV25-200BZI
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TEILNUMMER DES HERSTELLERS
CY7C1354DV25-200BZI
BESCHREIBUNG
IC SRAM 9MBIT PARALLEL 165FBGA
DETAILIERTE BESCHREIBUNG
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.2 ns 165-FBGA (13x15)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
136
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Synchronous, SDR
Memory Size
9Mbit
Memory Organization
256K x 36
Memory Interface
Parallel
Clock Frequency
200 MHz
Write Cycle Time - Word, Page
-
Access Time
3.2 ns
Voltage - Supply
2.375V ~ 2.625V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
165-LBGA
Supplier Device Package
165-FBGA (13x15)
Base Product Number
CY7C1354
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Andere Namen
2156-CY7C1354DV25-200BZI-CY
-CY7C1354DV25
CYPCYPCY7C1354DV25-200BZI
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Infineon Technologies CY7C1354DV25-200BZI
Dokumente und Medien
Featured Product
1(Cypress Memory Products)
PCN Obsolescence/ EOL
1(Multiple Devices 15/Apr/2011)
PCN Packaging
()
Menge Preis
-
Stellvertreter
-